Projekte

The project will concentrate on Si nanowires and nanowire heterostructures in a core/shell structure as well as the investigation of selected properties like the oxidation behavior of Si nanowires as a function of the nanowire diameter and the doping of Si nanowires. The aim of the project is a deeper understanding of the physics of vertically grown nanowires as well as to establish the fundamentals for nanowire devices based on Si core/shell structures. For the development of device concepts based on Si NWs a number of basic processes are mandatory which are: the oxidation behavior, the doping possibilities and the combination of different materials for building-up p-n junctions and heterostructures. These fundamentals are not demonstrated and will be a main point of the continued project. A detailed characterization of the properties of the wires will be done. We will concentrate on the further development of the transport measurements and their understanding including the test of a 4 point measurement technique for single nanowires.